PART |
Description |
Maker |
5962-8863604LX 5962-8863603LX CY7C235A-25PC CY7C23 |
Memory : PROMs
|
Cypress
|
XQ18V04 XQR18V04 XQ18V04VQ44N DS082 |
IEEE Std 1149.1 boundary-scan (JTAG) support QPro XQ18V04 (XQR18V04) QML In-System Programmable Configuration PROMs QPro XQ18V04 (XQR18V04) QML In-System Programmable Configuration PROMs
|
Xilinx, Inc.
|
XQ1701L-SERIES XQR1701L-SERIES XQ1701LCC44M XQR170 |
Cascadable for storing longer or multiple bitstreams QPro configuration PROM. Radiation-hardened. QPro configuration PROM. SMD number 5962-9951401NXB. QPro configuration PROM. SMD number 5962-9951401QYA QPro Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR) 1M X 1 CONFIGURATION MEMORY, PDSO20 1M X 1 CONFIGURATION MEMORY, CQCC44
|
Xilinx, Inc. XILINX INC
|
CY7C271A-30PC CY7C271A-35WC CY7C271A CY7C271A-25JC |
32K x 8 Power Switched and Reprogrammable PROM 32K X 8 UVPROM, 35 ns, CDIP28 32K x 8 Power Switched and Reprogrammable PROM 32K X 8 OTPROM, 35 ns, PDIP28 Memory : PROMs
|
Cypress Semiconductor, Corp.
|
27C64 |
64K (8K x 8) CHMOS Production and UV Erasable PROMS
|
Intel
|
DM5516A DM5516AH |
Timer E2 16K Electrically Erasable PROMs
|
Seeq Technology
|
XCF08PVOG48C XCF16PVOG48C XCF32PVOG48C XCF04SVOG20 |
Platform Flash In-System Programmable Configuration PROMS
|
Xilinx, Inc
|
XCF01SF48 XCF01SFG48 XCF01SV XCF01SVG XCF02SVO20C |
Platform Flash In-System Programmable Configuration PROMS
|
XILINX[Xilinx, Inc]
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Silicon NPN epitaxial planar type
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|